本系為國內頂尖之工程教育機構,並以世界級之研究表現知名於國內外學術界。本系獨特之課程規劃融合了化學工程的核心訓練及材料科學的專業知識,並著重在新興研究領域和尖端產業的應用,為國內少數得以成功跨領域整合之科系。本系目前共有250位大學部學生、200位研究生及21位專任教師,教師之專業背景涵蓋化工、化學、材料、醫工及物理等領域,研究方向並包含許多化工與材料方面的先端課題,除提供學生完整之跨領域訓練外,亦為國內產業之升級提供優質人力資源與學術基礎。

專任教師
吳子嘉教授兼副國際長 電話:34258 信箱:atwu@ncu.edu.tw 研究室:工四館 E3-330 實驗室:電子薄膜實驗室 E3-403 學歷:加州大學洛杉磯分校材料科學工程博士 研究領域:先進電子構裝技術、電遷移現象、熱電材料性質、氧化鋅奈米柱電容、爬行腐蝕之研究以及同步輻射於材料應力及微結構研究。
研究背景
論文著作

Yao-Tsung Ouyang, Chien-Hao Su, Jenq-Yang Chang , Shao-Liang Cheng, Po-Che Lin, Albert T. Wu* “Metastable Ge nanocrystalline in SiGe matrix for photodiode”, Appl. Surf. Sci., 349, 387 (2015)

●He Jian-Yang, Lin Kwang-Lung, Albert T. Wu. “The diminishing of crystal structure of Sn9Zn alloy due to electrical current stressing”, J. Alloys. and Compd., 619, 372 (2015)

●Su Chien-Hao, Chen Hao, Lee Hsin-Yi, Liu, Cheng Yi, Ku Ching-Shun, Albert T. Wu*.Kinetic Analysis of Spontaneous Whisker Growth on Pre-treated Surfaces with Weak Oxide”, J. Electron. Mater., 43, 3290 (2014)

●Y.T. Huang, H.H. Hsu, Albert T. Wu*, “Electromigration-induced back stress in critical solder length for three-dimensional integrated circuits”, J. Appl. Phys., 115, 034904 (2014)

●C.Y. Liu*, Y.C. Hsu, Y.J. Hu, T.S. Huang, C.T. Lu, Albert T. Wu, “Back-Fill Sn Flux against Current-Stressing at Cathode Micro Cu/Sn Interface”, SSL., 3, 17 (2014)

●Y.J. Hu, Y.C. Hsu, T.S. Huang, C.T. Lu, Albert T. Wu, C.Y. Liu*, “Effect of Metal Bond-Pad Configurations on the Solder Microstructure Development of Flip-Chip Solder Joints”, J. Electron. Mater., 43, 170 (2014)

●Hsueh-Hsien Hsu, Tz-Cheng Chiu,  Tao-Chih Chang, Shin-Yi Huang,  Hsin-Yi Lee,  Ching-Shun Ku, Yang-Yi Lin,  Chien-Hao Su,  Li-Wei Chou,  Yao-Tsung Ouyang, Yi-Ting Huang,Albert T. Wu*, “Evaluation of Strain Measurement in a Die-to-Interposer Chip Using In Situ Synchrotron X-ray Diffraction and Finite-Element”, J. Electron. Mater., 43, 52 (2014)

●P.Y. Chien, C.H. Yeh, Albert T. Wu*, “Polarity effect in SAC305/bismuth telluride thermoelectric system”, J. Electron. Mater., 43, 284 (2014)

●Kao, C. Robert, Wu, Albert T. Wu, Tu, King-Ning, Lai, Yi-Shao, “Reliability of micro-interconnects in 3D IC packages”, Microelectonics Reliability., 53, 1-1 (2013)

●J.H. Hong, H.Y. Lee, Albert T. Wu*, “Massive Spalling and Morphological Change of Intermetallic Compound Affected by Adding Pd in Co-based Surface Finishes”, J. Alloys and Compd., 580, 195 (2013)

●Li-Wei Chou, Yang-Yi Lin, Albert T. Wu*, “High Surface Textured SnO2 Hybrid Thin Films Fabricated Using the Zozzle-spraying Process for Solar Cell Applications”, Appl. Surf. Sci., 277, 30 (2013)

●Yang-Yi Lin, Hsin-Yi Lee, Ching-Shun Ku, Li-Wei Chou, and Albert T. Wu*, “Bandgap Narrowing in High Dopant Tin Oxide Degenerate Thin Film Produced by Atmosphere Pressure Vapor Deposition”, Appl. Phys. Lett., 102, 11 (2013)

●Wei-Yu Chen,Tsung-Chieh Chiu ,Kwang-Lung Lin, Albert T. Wu, Wei-Luen Jang, Chung-Li Dong, Hsin-Yi Lee, “Anisotropic Dissolution behavior of the Second Phase in SnCu Solder Alloys under Current Stress”, Scripta Mater., 68, 317 (2013)

●Ying-Ta Chiu, Kwang-Lung Lin, Albert T. Wu, Wei-Luen Jang, Chung-Li Dong, Yi-Shao Laid, “Electrorecrystallization of Metal Alloy”, J. Alloys and Compd., 549, 190 (2013)

●Li-Chen Lo, Albert T. Wu*, “Interfacial Reactions Between Diffusion Barriers and Thermoelectric Materials Under Current Stressing”, J. Electron. Mater., 41, 3325 (2012)

●Chang-Yen Ko, Albert T. Wu*, “Evaluation of Diffusion Barrier Between Pure Sn and Te”, J. Electron. Mater., 41, 3320 (2012)

●Yang-Yi Lin, Albert T. Wu*, Ching-Shun Ku, and Hsin-Yi Lee, “Analysis of Chlorine Ions in Antimony-Doped Tin Oxide Thin Film Using Synchrotron Grazing Incidence X-ray Diffraction ”, Jpn. J. Appl. Phys., 51, 10 (2012)

●C.Y. Tsai, B.Y. Lou, H.H. Hsu, Albert T. Wu*, “Current Redistribution by Intermetallic Compounds in Through-Silicon-Via (TSV)”, Mater. Chem. Phys., 132, 162 (2012)

●T.Y. Lin, C.N. Liao, Albert T. Wu*, “Evaluation of Diffusion Barrier Between Lead-Free Solder Systems and Thermoelectric Materials”, J. Electron. Mater., 41 , 153 (2012)

●Chao-Nan Yeh, Kewin Yang, Hsin-Yi Lee and Albert T. Wu*, “Elucidating the Metal-Induced Crystallization and Diffusion Behavior of Al/a-Ge Thin Films”, J. Electron. Mater., 41 , 159 (2012)

●Hsueh-Hsien Hsu, Shin-Yi Huang, Tao-Chih Chang, and Albert T. Wu*, “Nucleation and Propagation of Voids in Microbumps for 3 Dimensional Integrated Circuits”, Appl. Phys. Lett.,99, 25 (2011)

●Chien-Hao Su, Hao Chen, Hsin-Yi Lee, and Albert T. Wu*, “Controlled Positions and Kinetic Analysis of Spontaneous Tin Whisker Growth”, Appl. Phys. Lett., 99 , 13 (2011)

●Chien-Hung Chen, Shiao-Yi Li, Anthony S.T. Chiang*, Albert T. Wu and Y.S.Sun, “Scratch-resistant Zeolite Anti-reflective Coating on Glass for Solar Applications”, Sol. Energy Mater. Sol. Cells, 95, 7 (2011)

●J. O. Suh, K. N. Tu, Albert T. Wu* and N. Tamura, “Preferred Orientation Relationships with Large Misfit Interfaces between Ni3Sn4 and Ni in Reactive Wetting of Eutectic SnPb on Ni”, J. Appl. Phys., 109, 12 (2011)

Albert T. Wu*, C. N. Siao, C. S. Ku and H. Y. Lee, “In Situ Observation of Stress Evolution in Pure Tin Strip under Electromigration Using Synchrotron Radiation x-ray”, J. Mater. Res., 25, 292 (2010)

●Y.Y. Chiang, R. Cheng, Albert T. Wu*, “Effects on Undercooling and Interfacial Reactions with Cu Substrates of Adding Bi and In to Sn-3Ag Solder ”, J. Electron. Mater., 39, 2397 (2010)

Albert T. Wu*, C. Y. Tsai, C. L. Kao, M. K. Shih, Y. S. Lai, H. Y. Lee and C. S. Ku, “In Situ Measurements of Thermal and Electrical Effects of Strain in Flip-Chip Silicon Dies Using Synchrotron Radiation X-rays”, J. Electron. Mater., 38, 2308 (2009)

Albert T. Wu* and K. H. Sun, “Determination of Average Failure Time and Microstructural Analysis of Sn-Ag-Bi-In Solder Under Electromigration”, J. Electron. Mater., 38, 2780 (2009)

Albert T. Wu* and Y. C. Ding, “The suppression of Tin Whisker Growth by the Coating of Tin Oxide Nano Particles and Surface Treatment”, Microelectron. Reliab., 49, 318 (2009)

Albert T. Wu*, Ming-Hsun Chen and Ciou-Nan Siao, “The Effects of Solid State Aging on the Intermetallic Compounds of SnAgBiIn Solders on Cu Substrates” J. Electron. Mater., 38, 252 (2009)

●Albert T. Wu*, Ming-Hsun Chen and Che-Hsun Huang, “Kinetic Analysis of Interfacial Reaction in Sn-Ag-Bi-In systems on Cu Substrates” J. Alloys. and Compd., 476, 436 (2009)

●W.H. Lin, Albert T. Wu*, S.Z. Lin, T.H. Chuang, and K.N. Tu, “Electromigration of Flip Chip Solder Joint of Sn-8Zn-3Bi on Copper Pads” J. Electron. Mater., 36, 753 (2007)

Albert T. Wu*, and F. Hua, “Interfacial Stability of Eutectic SnPb Solder and Composite 60Pb40Sn Solder on Cu/Ni(V)/Ti under Bump Metallization”, J. Mater. Res., 22, 735 (2007)

●K. N. Tu, Chih Chen and Albert T. Wu*, “Stress Analysis of Spontaneous Sn Whisker Growth”, J. Mater. Sci. - Mater. Electron. 18, 269 (2007)

●K. N. Tu, J. O. Suh, Albert T. Wu*, N. Tamura, and C. H. Tung, “Mechanism and Prevention of Spontaneous tin whisker Growth”, Invited paper in Mater. Trans. 46, 11 (2005)

Albert T. Wu, A. M. Gusak, and K.N. Tu*, and C. R. Kao, “Electromigration Induced Grain Rotation in Anisotropic Conducting beta-Tin” Appl. Phys. Lett., 86, 241902 (2005)

Albert T. Wu, K. N. Tu*, J. R. Lloyd, N. Tamura, B. C. Valek, and C. R. Kao, “The Study of Microstructure Evolution of Tin Grains Due to Electromigration by Using Synchrotron X-ray Microdiffraction”, TMS Lett., 1, 165 (2004)

Albert T. Wu, K. N. Tu*, J. R. Lloyd, N. Tamura, B. C. Valek, and C. R. Kao, “Electromigration-induced Microstructure Evolution in Tin Studied by Synchrotron X-ray Microdiffraction”, Appl. Phys. Lett., 85, 2490 (2004)

研究計畫

1. 先進電子構裝技術 隨著科技的進步,電子產品皆走向輕薄短小,在微小尺寸下提高運算能力,將是電子構裝技術所需面臨的重要議題。本實驗室於此領域之研究包含TSV(矽通孔)、microbump、3D-IC於熱致應變及電遷移作用下之可靠度


2. 電遷移現象之研究  :     電遷移是原子在電場作用下,受靜電力和電子風力的影響所產生的原子移動現象。當電子元件通以高電流密度時,電子風帶動原子往陽極移動堆積形成凸起物,並在陰極留下孔洞,進而造成元件失效。而隨著電子技術的發展,元件尺寸越小,電遷移效應將更加明顯。

 

3. 熱電材料性質之研究 :   熱電材料是一種能將電能與熱能做可逆相互轉換的材料,熱電發電技術可以利用溫差進行直接發電,可應用於廢棄的熱能直接轉換成乾淨的電能,對於工廠或汽車所排放的廢熱進行回收發電是熱電材料相當吸引人的應用。


4.  氧化鋅奈米柱電容  :  隨著半導體工業的發展,晶片會越做越小,而電容、電感等被動元件相對也會所小,但同時要求效率要提升。本實驗室使用奈米溝槽的方式來有效增加表面積,進而增進電容的儲存能力。材料採用最先進的 ALD 技術沉積 high K 介電材料,期望利用此 high K 材料以及具有奈米結構的方式做成電容器且有效提高電容值,並在IC、DRAM、PCB板上作為元件使用。





專利