本系為國內頂尖之工程教育機構,並以世界級之研究表現知名於國內外學術界。本系獨特之課程規劃融合了化學工程的核心訓練及材料科學的專業知識,並著重在新興研究領域和尖端產業的應用,為國內少數得以成功跨領域整合之科系。本系目前共有250位大學部學生、200位研究生及21位專任教師,教師之專業背景涵蓋化工、化學、材料、醫工及物理等領域,研究方向並包含許多化工與材料方面的先端課題,除提供學生完整之跨領域訓練外,亦為國內產業之升級提供優質人力資源與學術基礎。

專任教師
李勝偉合聘教授 電話:34905 信箱:schon0911@gmail.com 研究室: 實驗室:奈米功能性材料實驗室 學歷:國立清華大學材料科學工學博士 研究領域:半導體磊晶材料、奈米矽鍺技術、電子薄膜材料、奈米熱電材料、金屬氧化物綠能與生醫材料
研究背景

論文著作

學術期刊論文

  1. W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, and H. H. Cheng, “Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer,” Appl, Phys. Lett. 81, 820-822 (2002).

  2. B.-C. Hsu, K.-F. Chen, C.-C. Lai, S. W. Lee and C. W. Liu, “Oxide roughness effect on tunneling current of MOS diodes,” IEEE Trans. Electron Device, Vol. 49, No. 12, 2204-2208, (2002).

  3. S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, and H. H. Cheng, ”Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy,” J. Appl. Phys. 92, 6880-6885 (2002).

  4. W.-H. Chang, A.-T. Chou, W.-Y. Chen, H.-S. Chang, T.-M. Hsu, Z. Pei, P.-S. Chen, S. W. Lee, L.-S. Lai, S. C. Lu and M.-J. Tsai, “Room–temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots,” Appl. Phys. Lett. 83, 2958-2960 (2003).

  5. T. F. Chiang, W. W. Wu, S. L. Cheng, H. H. Lin, S. W. Lee, and L. J. Chen, “Auto-correlation function analysis of crystallization,” Appl. Surf. Sci. 212-213, 339-343 (2003).

  6. W. W. Wu, J. H. He, S. L. Cheng, S. W. Lee, and L. J. Chen, “Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge0.3 on (001)Si,” Appl, Phys. Lett. 83, 1836-1838 (2003).

  7. W. W. Wu, S. L. Cheng, S. W. Lee, and L. J. Chen, “Enhanced growth of low- resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer,” J. Vac. Sci. Technol. B 21, 2147-2150 (2003).

  8. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si,” Appl, Phys. Lett. 83, 5283-5285 (2003).

  9. P. S. Chen, Z. Pei, Y. H. Peng, S. W. Lee, and M.-J. Tsai, “Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” Mater. Sci. Eng. B 108, 213–218 (2004).

  10. J. H. He, Y. L. Chueh, W. W. Wu, S. W. Lee, L. J. Chen, and L. J. Chou, “The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon,” Thin Solid Films 469-470, 478-482 (2004).

  11. C. H. Yu, Y. L. Chueh, S. W. Lee, S. L. Cheng, L. J. Chen, L. J. Chou, and L. W. Cheng, “Solid phase reactions between Fe thin films and Si-Ge layers on Si,” Thin Solid Films 461, 81-85 (2004).

  12. H. C. Chen, K. F. Liao, S. W. Lee, and L. J. Chen, “Self-forming silicide/SiGe-based tube structure on Si(001) substrates,” Thin Solid Films 469-470, 483-486 (2004).

  13. Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M.-J. Tsai, W. H. Chang, W. Y. Chen, A. T. Chou, and T. M. Hsu, ”Room temperature 1.3 and 1.5μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers,” Appl. Surf. Sci. 224, 165-169 (2004).

  14. H. C. Chen, K. F. Liao, S. W. Lee, S. L. Cheng, and L. J. Chen, “Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate,” Thin Solid Films 461, 44-47 (2004).

  15. P. S. Chen, S. W. Lee, Y. H. Peng, C. W. Liu, and M. J. Tsai, “Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer,” Phys. Stat. Sol. (b) 241, 3650-3655 (2004).

  16. S. W. Lee, L. J. Chen, P. S. Chen, M. -J. Tsai, C. W. Liu, W. Y. Chen, and T. M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” Appl. Surf. Sci. 224, 152-155 (2004).

  17. S. W. Lee, P. S. Chen, M. -J. Tsai, C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Films 447-448, 302-305 (2004).

  18. H. C. Chen, C. H. Huang, K. F. Liao, S. W. Lee, C. H. Hsu, and L.J. Chen, “Morphology modification of quantum dots on Si(001) surface by ion sputtering,” Nucl. Instr. Methods B. 237, 465-469 (2005).

  19. J. H. He, W. W. Wu, S. W. Lee, L. J. Chen, Y. L. Chueh, and L. J. Chou, “Synthesis of blue-light-emitting Si1-xGex oxide nanowires,” Appl, Phys. Lett. 86, 263109 (2005).

  20. K. F. Liao, P. S. Chen, S. W. Lee, L. J. Chen, and C. W. Liu, “Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing,” Nucl. Instr. Methods B. 237, 217-222 (2005).

  21. P. S. Chen, S. W. Lee, Y. H. Liu, M. H. Lee, M. J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy and Si1-yCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” Mater. Sci. in Semi. Proc. 8, 15-19 (2005).

  22. S. W. Lee, Y. L. Chieh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yCy layer,” J. Vac. Sci. Technol. A 23, 1141-1145 (2005).

  23. S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. -J. Tsai, and C. W. Liu, “Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys. 98, 073506 (2005).

  24. H. C. Chen, C. W. Wang, S. W. Lee, and L. J. Chen, “Pyramid-Shaped Si-Ge Superlattice Quantum Dots with Strong Photoluminescence Properties,” Adv. Mater. 18, 367-370 (2006).

  25. P. S. Chen, S. W. Lee, K. F. Liao, “Growth of high-quality relaxed SiGe films with an intermediate Si1−yCy layer for strained Si n-MOSFETs,” Mater. Sci. Eng. B 130, 194–199 (2006).

  26. S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films 508, 120-123 (2006).

  27. S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen, P. S. Chen, L. J. Chou, and C. W. Liu, “Field-emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films 508, 218-221 (2006).

  28. H. C. Chen, S. W. Lee, and L. J. Chen, “Self-Aligned Nanolenses with Multilayered Ge-Silica Core-Shell Structures on Si (001),” Adv. Mater. 19, 222-226 (2007).

  29. S. L. Cheng*, H. Y. Chen, and S. W. Lee, “Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 Virtual Substrate," Appl. Surf. Sci. 254, 6211-6214 (2008).

  30. M. H. Lee*, S. T. Chang, S.W. Lee, P. S. Chen, K.-W. Shen, and W.-C.Wang, “Strained-Si with Carbon Incorporation forMOSFET Source/Drain,” Appl. Surf. Sci. 254, 6147-6150 (2008).

  31. P. S. Chen*, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe islands by Si pre-intermixing,” Appl. Surf. Sci. 254, 6076-6080 (2008).

  32. S. W. Lee*, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C. H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition,” Appl. Surf. Sci. 254, 6261-6264 (2008).

  33. C.-H. Lee, C. M. Lin, C. W. Liu*, H. T. Chang, S. W. Lee, P. Shushpannikov, V. A. Gorodtsov, and R. V. Goldstein, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” ECS Trans. 16, 647-657 (2008).

  34. S. L. Cheng*, Y. Y. Chen, S. W. Lee, and H. F. Hsu, “Formation of Mg2Ni alloy layers and kinetic studies in the binary Mg-Ni system,” Thin Solid Films 517, 5029-5032 (2009).

  35. S. W. Lee*, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, ” Evolution of composition distribution of Si-capped Ge islands on Si(001),” Thin Solid Films 517, 5029-5032 (2009).

  36. C. W. Hu, T. C. Chang*, C. H. Tu, C. N. Chiang, C. C. Lin, S. W. Lee, C. Y. Chang, S. M. Sze, and T. Y. Tseng, “Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices,” J. Electrochem. Soc. 156, H751–H755 (2009).

  37. C.-H. Lee, Y.-Y. Shen, C. W. Liu*, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl, Phys. Lett. 94, 141909 (2009).

  38. S. W. Lee*, C. A. Chueh, and H. T. Chang, “Boron-induced strain relaxation in hydrogen- implanted SiGe/Si heterostructures,” J. Electrochem. Soc. 156, H921–H924 (2009).

  39. C. C. Lai, J. S. Lin, S. L. Cheng, and S. W. Lee*, “Oxidation behaviors of SiGe nanowire arrays fabricated by Au-assisted wet chemical etching,” ECS Trans. 25, 87-93 (2010).

  40. C.-H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu*, “Surface orientation effects on SiGe quantum dots and nanorings formation,” ECS Trans. 33, 649-659 (2010).

  41. S. W. Lee*, B. L. Wu, and H. T. Chang, “Fabrication of nanometer-scale Si field emitters using self-assembled Ge nanomasks,” J. Electrochem. Soc. 157, H174–H177 (2010).

  42. S. L. Cheng*, C. Y. Chen, and S. W. Lee, “Kinetic investigation of the electrochemical synthesis of vertically-aligned periodic arrays of silicon nanorods on (001)Si substrate,” Thin Solid Films 518, S190-S195 (2010).

  43. S. W. Lee*, H. T. Chang, C. H. Lee, S. L. Cheng, and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Films 518, S196-199 (2010).

  44. S. W. Lee*, S. S. Huang, H. C. Hsu, C. W. Nieh, W. C. Tsai, C. P. Lo, C. H. Lai, P. Y. Tsai, M. Y. Wang, C. M. Wu, and M. D. Lei, “C redistribution during Ni silicide formation on Si1-yCy epitaxial layers,” J. Electrochem. Soc. 157, H297–H300 (2010).

  45. C.-H. Lee, C. W. Liu*, H. T. Chang, and S. W. Lee, “Hexagonal SiGe quantum dots and nanorings on Si(110),” J. Appl. Phys. 107, 056103 (2010).

  46. H. T. Chang, W. Y. Chen, T. M. Hsu, P. S. Shushpannikov, R. V. Goldstein, and S. W. Lee*, “Strain relaxation during formation of Ge nanolens stacks,” Electrochem. Solid-State Lett. 13, K43-K45 (2010).

  47. W. W. Wu*, C.W. Wang, K. N. Chen, S. L. Cheng, and S. W. Lee, “Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer,” Thin Solid Films 518, 7279-7282 (2010).

  48. S. W. Lee*, S. H. Huang, S. L. Cheng, P. S. Chen, and W. W. Wu, “Ni silicide formation on epitaxial Si1-yCy/(001) layers,” Thin Solid Films 518, 7394-7397 (2010).

  49. S. L. Cheng*, C. Y. Yang, S. W. Lee, H. F. Hsu, and H. Chen, “Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate,” Mater. Chem. Phys. 130, 609- 614 (2011).

  50. S. L. Cheng*, C. Y. Zhan, S. W. Lee, and H. Chen, “Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer,” Appl. Surf. Sci. 257, 8712-8717 (2011).

  51. S. W. Lee*, H. T. Chang, J. K. Chang, and S. L. Cheng, “Formation mechanism of self-assembled Ge/Si/Ge composite islands,” J. Electrochem. Soc. 158, H1113–H1116 (2011).

  52. M. H. Lee*, B.-F. Hsieh, S. T. Chang, and S. W. Lee, “Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering,” Thin Solid Films 520, 3379-3381 (2012).

  53. S. L. Cheng*, C. H. Lo, C. F. Chuang, and S. W. Lee, “Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001)Si substrates,” Thin Solid Films 520, 3309-3313 (2012).

  54. S. L. Cheng*, Y. C. Tseng, S. W. Lee, and H. Chen, “Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si1−xCx layers on Si(100),” Appl. Surf. Sci. 258, 8713-8718 (2012).

  55. C. H. Lai, C. K. Lin, S. W. Lee, H. Y. Li, J. K. Chang*, and M. J. Deng, “Nanostructured Na-doped vanadium oxide synthesized using an anodic deposition technique for supercapacitor applications,” J. Alloys Compd. 536, S428–S431 (2012).

  56. K. R. Lee, H. T. Chang, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Thermal stability of Ni(Ta) silicide films on ultra-thin silicon-on-insulator substrates,” J. Alloys Compd. 536, S407–S411, (2012).

  57. J. E. Chang, P. H. Liao, C. Y. Chien, J. C. Hsu, M. T. Hung, S. W. Lee, W. Y. Chen, T. M. Hsu, T. George, and P. W. Li*, “Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots,” J. Phys. D 45, 105303 (2012).

  58. C. H. Lai, Y. J. Lee, P. H. Yeh, and S. W. Lee*, “Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching” Nanoscale Res. Lett. 7, 140, (2012).

  59. C. C Wang, K. H. Chen, I. H. Chen, W. T. Lai, H. T. Chang, W. Y. Chen, J. C. Hsu, S. W. Lee, T. M. Hsu, M. T. Hung, and P. W. Li*, “CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications,” IEEE Trans. Nanotechnol. 11, 657-660 (2012).

  60. M. T. Hung, C. C. Wang, J. C. Hsu, J. Y. Chiou, S. W. Lee, T. M. Hsu, P. W. Li*, “Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system,” Appl, Phys. Lett. 101, 251913 (2012).

  61. S. L. Cheng*, Y. H. Lin, S. W. Lee, T. Lee, H. Chen, J. C. Hu, and L. T. Chen, “Fabrication of Size-Tunable, Periodic Si Nanohole Arrays by Plasma Modified Nanosphere Lithography and Anisotropic Wet Etching,” Appl. Surf. Sci. 263, 430-435 (2012).

  62. S. L. Cheng, T. L. Hsu, T. Lee, S. W. Lee, J. C. Hu, and L. T. Chen, “Characterization and kinetic investigation of electroless deposition of pure cobalt thin films on silicon substrates,” Appl. Surf. Sci. 264, 732-736 (2013).

  63. H. T. Chang, I. P. Lin, S. C. Twan, W. Y. Woon, and S. W. Lee*, “Carbon re-incorporation in phosphorus-doped Si1-yCy epitaxial layers during thermal annealing,” J. Alloys Compd. 553, 30-34 (2013).

  64. H. T. Chang, C. C. Wang, J. C. Hsu, M. T. Hung, P. W. Li, and S. W. Lee*, “High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials,” Appl, Phys. Lett. 102, 101902 (2013).

  65. M. C. Chuang, H. M. Chien, Y. H. Chain, G. C. Chi, S. W. Lee, and W. Y. Woon, “Local anodic oxidation kinetics of chemical vapor deposition-grown graphene supported on a thin oxide buffered silicon template,” Carbon 54, 336-342 (2013)

  66. M. Y. Lan, C. P. Liu, H. H. Huang, J. K. Chang, and S. W. Lee*, “Diameter-sensitive biocompatibility of anodic TiO2 nanotubes treated with supercritical CO2 fluid,” Nanoscale Res. Lett. 8, 150 (2013).

  67. T. Lee, H. L. Lee, M. H. Tsai, S. L. Cheng, S. W. Lee, J. C. Hu, and L. T. Chen, “A biomimetic tongue by photoluminescent metal-organic frameworks,” Biosens. and Bioelectron. 43, 56-62 (2013).

  68. T. Lee, J. W. Chen, H. L. Lee, T. Y. Lin, Y. C. Tsai, S. L. Cheng, S. W. Lee, J. C. Hu, and L. T. Chen, “Stabilization and spheroidization of ammonium nitrate: Co-crystallization with crown ethers and spherical crystallization by solvent screening,” Chem. Eng. J. 225, (2013) 809-817.

  69. K. R. Lee, C. J. Tseng, J. K. Chang, I. M. Hung, J. C. Lin, and S. W. Lee*, “Strontium doping effect on phase homogeneity and conductivity of Ba1-xSrxCe0.6Zr0.2Y0.2O3-δ proton-conducting oxides,” Int. J. Hydrogen Energy 38, 11097-11103 (2013).

  70. K. R. Lee, I. P. Lin, H. T. Chang, and S. W. Lee*, “Platinum silicide formation on Si1-yCy epitaxial layers” J. Alloys Compd. 574, 415-420 (2013).

  71. H. T. Chang, B. L. Wu, S. L. Cheng, T. Lee, S. W. Lee*, “Uniform SiGe/Si quantum-well nanorod and nanodot arrays fabricated using nanosphere lithography,” Nanoscale Res. Lett. 8, 349 (2013).

  72. Y. P. Hsu, S. W. Lee, J. K. Chang, C. J. Tseng, K. R. Lee, C. H. Wang “Effects of platinum doping on the photoelectrochemical properties of sol-gel spin-coated Fe2O3 thin films,” Int. J. Electrochem. Sc. 8, 11615 - 11623 (2013).

  73. M. Y. Lan, C. P. Liu, H. H. Huang, and S. W. Lee*, “Both Enhanced Biocompatibility and Antibacterial Activity in Ag-decorated TiO2 Nanotubes,” PLOS ONE 8, e75364 (2013).

  74. M. Y. Lan, Y. B. Hsu, C. H. Hsu, C. Y. Ho, J. C. Lin and S. W. Lee*, “Induction of apoptosis by high-dose gold nanoparticles in nasopharyngeal carcinoma cells,” Auris Nasus Larynx 40, 563-568 (2013).

  75. S. W. Lee, C. J. Tseng, J. K. Chang*, K. R. Lee, C. T. Chen, I. M. Hung, S. L. Lee, and J. C. Lin, “Synthesis and characterization of Ba0.6Sr0.4Ce0.8−xZrxY0.2O3−δ proton-conducting oxides for use as fuel cell electrolyte,” J. Alloys Compd. 586, S506-S510 (2014).

  76. S. H. Huang, S. C. Twan, S. L. Cheng, T Lee, J. C. Hu, L. T. Chen, and S. W. Lee*, ”Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(001),” J. Alloys Compd. 586, S362-S367 (2014).

  77. K. R. Lee, Y. C. Chiang, I. M. Hung, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Proton-conducting Ba1-xKxCe0.6Zr0.2Y0.2O3-δ oxides synthesized by sol-gel combined with composition-exchange method,” Ceram. Int. 40, 1865-1872 (2014).

  78. M. Y. Lan, S. L. Lee, H. H. Huang, P. F. Chen. C. P. Liu, and S. W. Lee*, “Diameter selective behavior of human nasal epithelial cell on Ag-coated TiO2 nanotubes,” Ceram. Int. 40, 4745-4751 (2014).

  79. S. L. Cheng, Y. H. Lin, S. W. Lee, and H. Chen, “Periodic arrays of nanopores made on single-crystalline silicon substrates with a self-assembled lithographic process,” Thin Solid Films 557, 376-381 (2014).

  80. Mao-Chia Huang, Tsing-Hai Wang, Wen-Sheng Chang, Jing-Chie Lin, Ching-Chen Wu, I.-Chen Chen, Kun-Cheng Peng,Sheng-Wei Lee, “Temperature dependence on p-Cu2O thin film electrochemically deposited onto copper substrate,” Appl. Surf. Sci. 301, 369-377(2014).

  81. N.Wongittharom, T. C. Lee, I. M. Hung, S. W. Lee, Y. C. Wang, and J. K. Chang, “Ionic liquid electrolytes for high-voltage rechargeable Li/LiNi0.5Mn1.5O4 cells,” J. Mater. Chem. A 2, 3613-3620 (2014).

  82. H. T. Chang, S. Y. Wang, and S. W. Lee*, “Designer Ge/Si composite quantum dots with enhanced thermoelectric properties,” Nanoscale 6, 3593-3598 (2014).

  83. C. H. Wang, S. W. Lee, C. J. Tseng, J. W. Wu, I. M. Hung, C. M. Tseng, and J. K. Chang, “Nanocrystalline Pd/carbon nanotube composites synthesized using supercritical fluid for superior glucose sensing performance,” J. Alloys Compd., accepted (2014).

  84. Sheng-Rui Jian*, Sheng-Wei Lee*, Jeng-Kuei Chang, Chung-Jen Tseng, and Jenh-Yih Juang, “Nanomechanical properties and fracture behaviors of Ba1-xKxCe0.6Zr0.2Y0.2O3-δ electrolytes by nanoindentation,” Sci Adv. Mater., accepted (2014).

  85. Chung-Jen Tseng, Jeng-Kuei Chang, I-Ming Hung, Kan-Rong Lee, Sheng-Wei Lee*, “BaZr0.2Ce0.8-xYxO3-δ solid oxide fuel cell electrolyte synthesized by sol-gel combined with composition-exchange method,” Int. J. Hydrogen Energy, accepted (2014).


專書

   圖解光電半導體元件(ISBN978-957-11-7477-8),五南圖書出版股份有限公司。


會議論文

  1. S. W. Lee*, H. T. Chang, C.-H. Lee, C. A. Chueh, S. L. Cheng, W. W. Wu, and C. W. Liu, “Vertical self-alignment of SiGe nanolenses on Si(001),” 214th ECS Meeting, Honolulu, USA, 2008.

  2. C. A. Chueh, S. W. Lee*, C. S. Lee, Y. F. Hsieh, and W. W. Wu, “Fabrication of SiGe Nanowire Arrays Using Au-Assisted Chemical Etching,” 216th ECS Meeting, Vienna, Austria, 2009.

  3. C. C. Lai, S. L. Cheng, and S. W. Lee*, “Size control of SiGe nanowire arrays using Au-assisted chemical etching and subsequent oxidation,” 2nd International Microprocesses and Nanotechnology Conference, Sapporo, Japan, 2009.

  4. S. H. Huang, J. S. Lin, and S. W. Lee*, “Formation of Ni silicides on Si1-yCy epitaxial layers,” TACT 2009 International Thin Films Conference, Taipei, Taiwan, 2009. (Best Poster Paper Award)

  5. K. R. Lee, H. T. Chang, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Formation and Thermal Stability of Ni(Ta)Si films on Silicon-on-Insulator Substrates.” 18th International Symposium on Metastable, Amorphous and Nanostructured Materials, Gijon, Spain, 2011.

  6. H. T. Chang, S. Y. Wang, M. T. Hung, P. W. Li, and S. W. Lee*, “Formation mechanism and morphological controlling of self-Assembled Ge/Si/Ge composite quantum dots,” 216th ECS Meeting, Seattle, USA, 2012.

  7. S. H. Huang, S. C. Twan, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Influences of Al addition on the thermal stability of NiSi films on Si (001),” 19th International Symposium on Metastable, Amorphous and Nanostructured Materials, Moscow, Russia, 2012.

  8. H. T. Chang, B. L. Wu, S. L. Cheng, and S. W. Lee*, “SiGe/Si superlattice-quantum-dot arrays fabricated by using nanosphere lithography,” 8th International Conference on Silicon Epitaxy and Heterostructures, Fukuoka, Japan, 2013.

  9. K. R. Lee, J. K. Chang, C. J. Tseng, I. M. Hung, and S. W. Lee*, “High-quality K-doped Ba(Ce,Zr)YO3 oxides synthesized by sol-gel combined with composition-exchange method for use in fuel cell electrolyte,” 20th International Symposium on Metastable, Amorphous and Nanostructured Materials, Torino, Italy, 2013.

  10. M. Y. Lan, C. P. Liu, H. H. Huang, and S. W. Lee*, “Concurrently enhanced biocompatible and antibacterial Ag-decorated TiO2 nanotubes,” 20th International Symposium on Metastable, Amorphous and Nanostructured Materials, Torino, Italy, 2013.


技術報告

  1. 國科會計畫 (NSC97-2218-E-008-003) 結案報告,“矽鍺基奈米點之製作及應用性質之研究(I)”,97年1月1日-97年10月31日。

  2. 國科會/原能會科技學術合作研究計畫 (NSC98-2623-E-008-007-NU) 成果報告,“高聚光型太陽能電池之鍺磊晶片製作技術研發”,98年1月1日-98年12月31日。

  3. 國科會計畫 (NSC 97-2221-E-008-091-MY3) 結案報告,“後矽電子之增強技術-子計畫五(I):絕緣層上鍺錫基板之製作及應用性質之研究”,97年8月1日-100年7月31日。

  4. 國科會補助產學合作研究計畫 (NSC 100-2622-E-008-009-CC3) 結案報告,“奈米結構陣列對於多接面太陽能電池轉換效率提升之研究”,100年6月1日-101年5月31日。

  5. 榮台聯大專題研究計畫結案報告,“表面奈米化鈦金屬鼻植入物之研究開發”,101年1月1日-101年12月31日。

  1. 碩士班學生張宏臺榮獲「國立中央大學97學年度優秀學生獎學金」。

  2. 碩士班學生張宏臺榮獲Thin Films 2008海報論文競賽Top 10。

  3. 碩士班學生黃仕賢榮獲「國立中央大學98學年度優秀學生獎學金」。

  4. 碩士班學生張宏臺榮獲「國立中央大學98學年度傑出研究生獎學金」。

  5. 碩士班學生黃仕賢榮獲TACT 2009最佳海報論文獎。

  6. 碩士班學生林政勳榮獲2010年中國材料年會「奈米結構材料與分析組」學生論文獎優等獎。

  7. 碩士班學生黃仕賢榮獲2010年中國材料年會「電子材料組」學生論文獎優等獎。

  8. 碩士班學生張景星、博士班學生張宏臺榮獲2010台灣奈米影像競賽「SPM組」佳作獎。

  9. 博士班學生張宏臺榮獲2011年台德秋季三明治計畫暨青年暑期營學員獎助。

  10. 博士班學生張宏臺榮獲「國立中央大學101學年度校長獎學金」。

  11. 碩士班學生林子傑、博士班學生張宏臺榮獲2012台灣奈米影像競賽「SPM組」獲得銅牌獎。

  12. 碩士班學生劉家珮榮獲2012年中國材料年會「生醫材料組」學生論文獎優等獎。

  13. 博士班學生李侃融榮獲「國立中央大學102學年度研究傑出研究生獎學金」。

  14. 2012年榮總台聯大子計畫海報成果發表第一名。

  15. 碩士班學生劉家珮榮獲2013年中國材料年會「生醫材料組」學生論文獎優等獎。

  16. 碩士班學生林子傑榮獲2013年中國材料年會「光電與光學材料組」學生論文獎優等獎。

  17. 實驗室團隊榮獲「榮台聯大合作研究優良論文獎」第三名。

  18.博士班張宏臺榮獲2013年中國材料年會「電子(介電、積體、構裝)材料組」學生論文獎優等獎。
研究計畫
專利
  1. 陳邦旭、李勝偉、陳力俊、劉致為,“一種減少穿遂缺陷密度之應變矽製造方法”中華民國I237908 (2005)。

  2. 陳邦旭、李勝偉、陳力俊、廖高峰、劉致為,“應變鬆弛之薄矽鍺磊晶層之結構及其製造方法”中華民國 I263709 (2006)。

  3. Pang-Shiu Chen, Sheng-Wei Lee, Lih-Juann Chen, Chee-Wee Liu, “Starin Silicon Forming Method with Reduction of Threading Dislocation Density” US 7102153 (2006).

  4. Pang-Shiu Chen, Sheng-Wei Lee, Lih-Juann Chen, Chee-Wee Liu,”Construction of thin strain- relaxed SiGe layers and method for fabricating the same” US 7202512 (2007).
  5. 鄭憲清、許凱迪、林景崎、李泉、曾重仁、張仍奎、李勝偉、洪逸明、許志雄,陶瓷金屬膜、其製造方法及其應用,中華民國專利申請中 (申請案號: 101139498)。

  6. 李勝偉、李侃融、林景崎、李泉、曾重仁、張仍奎、鄭憲清、洪逸明、許志雄、李勝隆、江衍君,用於固態氧化物燃料電池之電解質製備方法,中華民國專利申請中 (申請案號:102127624)。

  7. 李勝偉、張宏臺、李侃融、李佩雯、辛正倫,高聚光型太陽能電池之鍺磊晶片製作技術研發,中華民國,中華民國專利申請中 (申請案號: 102131816)。

  8. Sheng-Wei Lee, Kan-Rong Lee, Jing-Chie Lin, Chuan Li, Chung-Jen Tseng, Jeng-Kuei Chang, Jason Shiang-Ching Jang, I-Ming Hung, Chi-Shiung His, Sheng-Long Lee, Yen-Chun Chiang, “Preparation Method of Electrolytes for Solid Oxide Fuel Cells” US patent filing (Filing No. 14/032635).

  9. 張仍奎、吳佳紋、李勝偉、王覺漢,酵素型感測器,中華民國、美國專利申請中 (校內案號: 102045)。